VEMT2500X01 Vishay, VEMT2500X01 Datasheet - Page 5

• Manufacturer Part Number: VEMT2500X01
• Description: Photodetector Transistors NPN PHOTO TRANS
• Manufacturer: Vishay
• Type: Phototransistorr

Specifications of VEMT2500X01

• Maximum Power Dissipation: 100 mW
• Collector- Emitter Voltage Vceo Max: 20 V
• Collector-emitter Breakdown Voltage: 20 V
• Collector-emitter Saturation Voltage: 0.4 V
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Product: Phototransistor
• Package / Case: Reverse Gull Wing
• Wavelength: 850 nm
• Wavelength Typ: 850nm
• Power Consumption: 100mW
• Viewing Angle: 15°
• Transistor Case Style: SMD
• No. Of Pins: 2
• Half Angle: 15°
• Breakdown Voltage Vbr: 20V
• Dark Current: 1nA
• Rohs Compliant: Yes
• Svhc: No SVHC (20-Jun-2011)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PACKAGE DIMENSIONS VEMT2520X01 in millimeters
Document Number: 81134
Rev. 1.1, 21-Feb-11
Drawing-No.: 6.544-5383.01-4
Issue: 4; 28.01.09
21569
Collector
Solder pad proposal
acc. IPC 7351
For technical questions, contact:
0.4
2.45
5.15
4.2 ± 0.2
2.3 ± 0.2
Pin ID
2.2
Silicon NPN Phototransistor
Emitter
[e-mail]
Exposed copper
VEMT2500X01, VEMT2520X01
Ø 1.8
2.2
Not indicated tolerances ± 0.1
Technical drawings
according to DIN
specifications
Vishay Semiconductors
0.6
www.vishay.com
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