TLP181BLTPRFT Toshiba, TLP181BLTPRFT Datasheet - Page 6
TLP181BLTPRFT
Manufacturer Part Number
TLP181BLTPRFT
Description
Transistor Output Optocouplers DC Transistor Miniflat
Manufacturer
Toshiba
Datasheet
1.TLP181FT.pdf
(9 pages)
Specifications of TLP181BLTPRFT
Maximum Input Diode Current
50 mA
Maximum Reverse Diode Voltage
5 V
Output Device
Transistor
Output Type
DC
Configuration
1
Input Type
DC
Maximum Collector Emitter Voltage
80 V
Maximum Collector Emitter Saturation Voltage
200 mV (Typ)
Isolation Voltage
3750 Vrms
Current Transfer Ratio
600 %
Maximum Forward Diode Voltage
1.3 V
Minimum Forward Diode Voltage
1 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
200 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Package / Case
MFSOP6
Number Of Elements
1
Reverse Breakdown Voltage
5V
Forward Voltage
1.3V
Forward Current
50mA
Collector-emitter Voltage
80V
Package Type
MFSOP
Collector Current (dc) (max)
50mA
Power Dissipation
200mW
Collector-emitter Saturation Voltage
0.4V
Pin Count
4
Mounting
Surface Mount
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TLP181BLTPRFT
Manufacturer:
Toshiba
Quantity:
162 000
3000
1000
−3.2
−2.8
−2.4
−2.0
−1.6
−1.2
−0.8
−0.4
100
500
300
100
80
60
40
20
50
30
10
−20
0.1
0
3
10
0
− 3
0.3 0.5
Ambient temperature Ta (°C)
Forward current I
20
3
Duty cycle ratio D
ΔV
1
10
I
40
F
FP
I
− 2
F
/ ΔTa – I
– Ta
– D
Pulse width ≤ 100μs
Ta = 25°C
3
60
3
R
F
5
F
10
80
(mA)
R
− 1
10
100
3
30
10
120
50
0
6
0.001
1000
0.01
200
160
120
100
500
300
100
0.1
80
40
10
50
30
10
0
1
5
3
1
−20
0.6
0
1.0
0
Pulse forward voltage V
0.4
85°C
Ambient temperature Ta (°C)
Forward voltage V
20
1.4
25
°C
0.8
I
40
FP
P
I
F
Pulse width ≤ 10μs
Repetitive
Frequency = 100Hz
Ta = 25°C
C
– V
– V
1.8
– Ta
−25°C
60
F
FP
1.2
2.2
F
80
(V)
FP
2009-11-12
1.6
2.6
100
TLP181
(V)
120
3.0
2