TLP181BLTPRFT Toshiba, TLP181BLTPRFT Datasheet - Page 8

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TLP181BLTPRFT

Manufacturer Part Number
TLP181BLTPRFT
Description
Transistor Output Optocouplers DC Transistor Miniflat
Manufacturer
Toshiba
Datasheet

Specifications of TLP181BLTPRFT

Maximum Input Diode Current
50 mA
Maximum Reverse Diode Voltage
5 V
Output Device
Transistor
Output Type
DC
Configuration
1
Input Type
DC
Maximum Collector Emitter Voltage
80 V
Maximum Collector Emitter Saturation Voltage
200 mV (Typ)
Isolation Voltage
3750 Vrms
Current Transfer Ratio
600 %
Maximum Forward Diode Voltage
1.3 V
Minimum Forward Diode Voltage
1 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
200 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Package / Case
MFSOP6
Number Of Elements
1
Reverse Breakdown Voltage
5V
Forward Voltage
1.3V
Forward Current
50mA
Collector-emitter Voltage
80V
Package Type
MFSOP
Collector Current (dc) (max)
50mA
Power Dissipation
200mW
Collector-emitter Saturation Voltage
0.4V
Pin Count
4
Mounting
Surface Mount
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TLP181BLTPRFT
Manufacturer:
Toshiba
Quantity:
162 000
1000
0.24
0.20
0.16
0.12
0.08
0.04
500
300
100
50
30
10
−40
0
5
3
1
1
Ta = 25°C
I F = 16mA
V CC = 5V
−20
Ambient temperature Ta (°C)
3
Load resistance R
0
Switching Time – R
5
20
V
CE(sat)
10
40
– Ta
L
t
OFF
t ON
t s
(kΩ)
60
L
30
I F = 1mA
I C = 0.2mA
50
80
100
100
8
100
160
0.5
0.3
0.1
0.5
0.3
0.1
50
30
10
50
30
10
5
3
1
5
3
1
−20
−20
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
0
0
Switching Time – Ta
20
20
I
C
– Ta
I F = 25mA
40
40
t ON
t
t s
0.5mA
OFF
10mA
1mA
5mA
I F = 16mA
V CC = 5V
R L = 1.9kΩ
60
60
V CE = 5V
2009-11-12
80
80
TLP181
100
100

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