SI4174DY-T1-GE3 Vishay, SI4174DY-T1-GE3 Datasheet

MOSFET Power 30V 17A 5.0W

SI4174DY-T1-GE3

Manufacturer Part Number
SI4174DY-T1-GE3
Description
MOSFET Power 30V 17A 5.0W
Manufacturer
Vishay
Datasheet

Specifications of SI4174DY-T1-GE3

Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0095 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
30 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Drain Source Voltage Vds
30V
On Resistance Rds(on)
7.8mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +150°C
Transistor Case
RoHS Compliant
Transistor Case Style
SOIC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4174DY-T1-GE3
Manufacturer:
VISHAY
Quantity:
30 000
Part Number:
SI4174DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4174DY-T1-GE3
Quantity:
5 000
Company:
Part Number:
SI4174DY-T1-GE3
Quantity:
70 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 68998
S-82773-Rev. A, 17-Nov-08
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
Ordering Information: Si4174DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
V
DS
30
(V)
G
S
S
S
C
= 25 °C.
0.0095 at V
0.013 at V
1
2
3
4
R
DS(on)
Top View
SO-8
GS
GS
J
(Ω)
= 4.5 V
= 150 °C)
= 10 V
b, d
N-Channel 30-V (D-S) MOSFET
8
7
6
5
D
D
D
D
I
D
14.5
17
(A)
Steady State
a
t ≤ 10 s
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
g
8 nC
(Typ.)
New Product
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
GS
DS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Notebook CPU Core
- High-Side Switch
Typical
38
20
g
and UIS Tested
®
Power MOSFET
G
- 55 to 150
N-Channel MOSFET
9.6
2.2
2.5
1.6
Limit
12
± 20
13.5
4.5
3.2
30
17
50
20
20
5
b, c
b, c
b, c
b, c
b, c
D
S
Maximum
50
25
Vishay Siliconix
Si4174DY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI4174DY-T1-GE3 Summary of contents

Page 1

... Top View Ordering Information: Si4174DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4174DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... 3.2 1.6 0.0 1.5 2.0 2.5 1300 1040 780 520 260 1.8 1 1.0 0.8 0.6 11.1 14.8 18.5 Si4174DY Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss 0 0 2.4 4.8 7.2 9.6 V ...

Page 4

... Si4174DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.05 0. °C J 0.03 0.02 0.01 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.0 1.6 1.2 0.8 0.4 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4174DY Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Foot www.vishay.com ...

Page 6

... Si4174DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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