SI4174DY-T1-GE3 Vishay, SI4174DY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4174DY-T1-GE3
• Description: MOSFET Power 30V 17A 5.0W
• Manufacturer: Vishay

Specifications of SI4174DY-T1-GE3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0095 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 30 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 7.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68998
S-82773-Rev. A, 17-Nov-08
0.015
0.013
0.011
0.009
0.007
0.005
50
40
30
20
10
10
On-Resistance vs. Drain Current and Gate Voltage
0
8
6
4
2
0
0.0
0.0
0
V
I
D
DS
0.5
= 10 A
3.7
10
V
= 10 V
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
V
V
V
I
- Total Gate Charge (nC)
GS
D
GS
GS
Gate Charge
- Drain Current (A)
1.0
7.4
20
= 10 thru 4 V
= 4.5 V
= 10 V
V
DS
11.1
1.5
= 15 V
30
V
V
GS
DS
14.8
2.0
40
= 3 V
= 20 V
New Product
18.5
2.5
50
1300
1040
780
520
260
1.8
1.6
1.4
1.2
1.0
0.8
0.6
8.0
6.4
4.8
3.2
1.6
0.0
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
T
I
D
C
= 10 A
= 125 °C
T
2.4
1
C
V
V
Transfer Characteristics
GS
DS
= 25 °C
C
T
0
J
oss
C
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
iss
Capacitance
25
4.8
2
V
50
GS
T
Vishay Siliconix
C
= 10 V
= - 55 °C
7.2
3
75
Si4174DY
V
GS
100
www.vishay.com
= 4.5 V
9.6
4
125
150
12
5
3