IPD105N03L G Infineon Technologies, IPD105N03L G Datasheet - Page 10

• Manufacturer Part Number: IPD105N03L G
• Description: MOSFET Power N-CH 30 V 35 A
• Manufacturer: Infineon Technologies

Specifications of IPD105N03L G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15.5 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 2.2 V
• Continuous Drain Current: 35 A
• Power Dissipation: 38 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: PG-TO-252-3-11
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 8.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-252
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD105N03LGXT

IPD105N03L G
IPF105N03L G
IPS105N03L G
IPU105N03L G
Package Outline
PG-TO251-3-11
PG-TO251-3-11: Outline
PG-TO251-3-21: Outline
Rev. 1.02
page 10
2008-04-15