IPD105N03L G Infineon Technologies, IPD105N03L G Datasheet - Page 7

• Manufacturer Part Number: IPD105N03L G
• Description: MOSFET Power N-CH 30 V 35 A
• Manufacturer: Infineon Technologies

Specifications of IPD105N03L G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15.5 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 2.2 V
• Continuous Drain Current: 35 A
• Power Dissipation: 38 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: PG-TO-252-3-11
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 8.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-252
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD105N03LGXT

Rev. 1.02
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
34
32
30
28
26
24
22
20
AV
1
10
-60
=f(T
); R
-1
j
GS
); I
j(start)
-20
=25 Ω
D
=1 mA
10
0
20
150 °C
t
T
AV
j
10
60
[°C]
[µs]
1
100 °C
100
10
25 °C
2
140
180
10
page 7
3
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=30 A pulsed
IPS105N03L G
IPD105N03L G
g s
4
Q
Q
gate
g
Q
8
sw
[nC]
Q
g d
IPU105N03L G
IPF105N03L G
12
6 V
24 V
Q
15 V
g ate
2008-04-15
16