BU52011HFV-TR Rohm Semiconductor, BU52011HFV-TR Datasheet - Page 20

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BU52011HFV-TR

Manufacturer Part Number
BU52011HFV-TR
Description
Industrial Hall Effect / Magnetic Sensors ULTRA SMALL DETECT SENSOR; 1.65-3.3V
Manufacturer
Rohm Semiconductor
Series
-r
Type
Omnipolar Switchr
Datasheets

Specifications of BU52011HFV-TR

Operational Type
Bipolar
Operating Supply Voltage
1.8 V or 2.5 V
Current Rating
5 uA
Operating Point Min/max
- 5 mT to 5 mT
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Maximum Output Current
0.5 mA
Package / Case
HVSOF
Hall Effect Type
Bipolar
Output Current
500µA
Power Dissipation Pd
536mW
Sensor Case Style
HVSOF
No. Of Pins
5
Supply Voltage Range
1.65V To 3.3V
Operating Temperature Range
-40°C To +85°C
Svhc
No SVHC
Sensing Range
±5mT Trip, ±0.6mT Release
Voltage - Supply
1.65 V ~ 3.3 V
Current - Supply
8µA
Current - Output (max)
±0.5mA
Output Type
Digital, Open Collector
Features
-
Operating Temperature
-40°C ~ 85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BU52011HFV-TR
Manufacturer:
WILLSEMI
Quantity:
24 399
Part Number:
BU52011HFV-TR
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Company:
Part Number:
BU52011HFV-TR
Quantity:
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© 2010 ROHM Co., Ltd. All rights reserved.
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PIN No.
PIN No.
HALL
ELEMENT
A1
A2
B1
B2
1
2
3
4
HALL
ELEMENT
×
×
PIN NAME
PIN NAME
GND
GND
VDD
OUT
N.C.
OUT
N.C.
VDD
TIMING LOGIC
TIMING LOGIC
POWER SUPPLY
POWER SUPPLY
FUNCTION
FUNCTION
GROUND
GROUND
OUTPUT
OUTPUT
VDD
VDD
Fig.60
A1
4
Fig.61
OPEN or Short to GND.
OPEN or Short to GND.
20/31
COMMENT
COMMENT
B1
A2
1
2
OUT
Adjust the bypass capacitor value as
necessary, according to voltage noise conditions, etc.
OUT
The CMOS output terminals enable direct connection
to the PC, with no external pull-up resistor required.
GND
A1
B1
The CMOS output terminals enable direct
connection to the PC, with no external pull-up
resistor required.
Surface
GND
1
Surface
Adjust the bypass capacitor value as
necessary, according to voltage noise
conditions, etc.
4
B2
A2
3
0.1µF
2
0.1µF
Technical Note
2010.12 - Rev.F
B2
A2
Reverse
Reverse
3
2
A1
B1
4
1

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