BU52011HFV-TR Rohm Semiconductor, BU52011HFV-TR Datasheet - Page 23

• Manufacturer Part Number: BU52011HFV-TR
• Description: Industrial Hall Effect / Magnetic Sensors ULTRA SMALL DETECT SENSOR; 1.65-3.3V
• Manufacturer: Rohm Semiconductor
• Series: -r
• Type: Omnipolar Switchr

Specifications of BU52011HFV-TR

• Operational Type: Bipolar
• Operating Supply Voltage: 1.8 V or 2.5 V
• Current Rating: 5 uA
• Operating Point Min/max: - 5 mT to 5 mT
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Maximum Output Current: 0.5 mA
• Package / Case: HVSOF
• Hall Effect Type: Bipolar
• Output Current: 500µA
• Power Dissipation Pd: 536mW
• Sensor Case Style: HVSOF
• No. Of Pins: 5
• Supply Voltage Range: 1.65V To 3.3V
• Operating Temperature Range: -40°C To +85°C
• Svhc: No SVHC
• Sensing Range: ±5mT Trip, ±0.6mT Release
• Voltage - Supply: 1.65 V ~ 3.3 V
• Current - Supply: 8µA
• Current - Output (max): ±0.5mA
• Output Type: Digital, Open Collector
• Features: -
• Operating Temperature: -40°C ~ 85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

●Description of Operations
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I
(Offset Cancelation)
DD
(Micropower Operation)
B
GND
Fig.66
V
Startup time
×
DD
Standby time
Period
Fig.65
I
+
－
Hall Voltage
t
The bipolar detection Hall IC adopts an intermittent operation method
to save energy. At startup, the Hall elements, amp, comparator and
other detection circuits power ON and magnetic detection begins.
During standby, the detection circuits power OFF, thereby reducing
current consumption. The detection results are held while standby is
active, and then output.
Reference period: 50ms (MAX100ms)
Reference startup time: 48µs
※BD7411G don’t adopts an intermittent operation method.
The Hall elements form an equivalent Wheatstone (resistor) bridge
circuit. Offset voltage may be generated by a differential in this bridge
resistance, or can arise from changes in resistance due to package or
bonding stress. A dynamic offset cancellation circuit is employed to
cancel this offset voltage.
When Hall elements are connected as shown in Fig. 66 and a
magnetic field is applied perpendicular to the Hall elements, voltage is
generated at the mid-point terminal of the bridge. This is known as Hall
voltage.
Dynamic cancellation switches the wiring (shown in the figure) to
redirect the current flow to a 90˚ angle from its original path, and
thereby cancels the Hall voltage.
The magnetic signal (only) is maintained in the sample/hold circuit
during the offset cancellation process and then released.
23/31
Technical Note
2010.12 - Rev.F