PSMN039-100YS,115 NXP Semiconductors, PSMN039-100YS,115 Datasheet - Page 3

• Manufacturer Part Number: PSMN039-100YS,115
• Description: MOSFET N-CH LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN039-100YS,115

• Input Capacitance (ciss) @ Vds: 1847pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 39.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 28.1A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Power - Max: 74W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 71 mOhms
• Drain-source Breakdown Voltage: 90 V
• Continuous Drain Current: 20 A
• Power Dissipation: 74 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5586-2

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN039-100YS_2
Product data sheet
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
(A)
I
D
30
25
20
15
10
5
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering
temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
50
100
Conditions
T
T
V
V
t
T
t
V
V
T
p
p
j
j
mb
mb
GS
GS
GS
sup
150
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≤ 175 °C; T
All information provided in this document is subject to legal disclaimers.
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
T
≤ 100 V; unclamped; R
003aae091
mb
( ° C)
200
j
Rev. 02 — 2 April 2010
≤ 175 °C
mb
mb
j(init)
j
≥ 25 °C; R
= 100 °C; see
= 25 °C; see
Figure 2
= 25 °C; I
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET
mb
mb
= 25 °C; see
= 25 °C
GS
Fig 2.
D
GS
= 20 kΩ
= 28.1 A;
P
Figure 1
(%)
der
= 50 Ω
Figure 1
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
Figure 3
50
PSMN039-100YS
100
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2010. All rights reserved.
T
mb
Max
100
100
20
20
28.1
112
74
175
175
260
28.1
112
42
03aa16
(°C)
200
V
°C
°C
Unit
V
V
A
A
A
W
°C
A
A
mJ
3 of 15