PSMN039-100YS,115 NXP Semiconductors, PSMN039-100YS,115 Datasheet - Page 8

• Manufacturer Part Number: PSMN039-100YS,115
• Description: MOSFET N-CH LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN039-100YS,115

• Input Capacitance (ciss) @ Vds: 1847pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 39.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 28.1A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Power - Max: 74W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 71 mOhms
• Drain-source Breakdown Voltage: 90 V
• Continuous Drain Current: 20 A
• Power Dissipation: 74 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5586-2

NXP Semiconductors
PSMN039-100YS_2
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
R
(mΩ)
DSon
(A)
I
10
10
10
10
10
10
D
100
−1
−2
−3
−4
−5
−6
80
60
40
20
of gate-source voltage; typical values
gate-source voltage
Drain-source on-state resistance as a function
0
4
8
2
min
12
typ
4
16
max
V
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GS
003aae100
V
GS
(V)
03aa35
(V)
20
6
Rev. 02 — 2 April 2010
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
3.2
2.4
1.6
0.8
5
4
3
2
1
0
0
−60
junction temperature
factor as a function of junction temperature
-60
0
0
PSMN039-100YS
60
60
max
min
typ
120
120
© NXP B.V. 2010. All rights reserved.
003aad774
003aad280
T
T
j
j
(°C)
(°C)
180
180
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