BUK7Y20-30B,115 NXP Semiconductors, BUK7Y20-30B,115 Datasheet - Page 10

• Manufacturer Part Number: BUK7Y20-30B,115
• Description: MOSFET N-CH 30V 39.5A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7Y20-30B,115

• Input Capacitance (ciss) @ Vds: 688pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 29.5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 11.2nC @ 10V
• Power - Max: 59W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5517-2

NXP Semiconductors
7. Package outline
Fig 17. Package outline SOT669 (LFPAK)
BUK7Y20-30B
Product data sheet
Plastic single-ended surface-mounted package (LFPAK); 4 leads
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
UNIT
mm
H
OUTLINE
VERSION
SOT669
L 1
L 2
D
1.20
1.01
A
0.15
0.00
A 1
1.10
0.95
A 2
1
e
0.25
A 3
IEC
2
b 2
E
0.50
0.35
b
1/2
4.41
3.62
e
3
b 2
b
2.2
2.0
b 3
MO-235
All information provided in this document is subject to legal disclaimers.
JEDEC
4
0.9
0.7
b 4
0
A
REFERENCES
w
0.25
0.19
M
Rev. 04 — 7 April 2010
c
mounting
A
base
0.30
0.24
c 2
c 2
JEITA
scale
4.10
3.80
D
2.5
(1)
A 2
A
D 1
max
4.20
c
(1)
A 1
E
5.0
4.8
C
(1)
C
X
N-channel TrenchMOS standard level FET
E 1
5 mm
3.3
3.1
(1)
1.27
e
D 1
detail X
6.2
5.8
H
PROJECTION
EUROPEAN
0.85
0.40
BUK7Y20-30B
L
1.3
0.8
L 1
b 3
L
E 1
1.3
0.8
L 2
© NXP B.V. 2010. All rights reserved.
0.25
ISSUE DATE
w
(A )
b 4
04-10-13
06-03-16
3
y C
0.1
y
θ
SOT669
8°
0°
θ
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