BUK7Y20-30B,115 NXP Semiconductors, BUK7Y20-30B,115 Datasheet - Page 7

• Manufacturer Part Number: BUK7Y20-30B,115
• Description: MOSFET N-CH 30V 39.5A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7Y20-30B,115

• Input Capacitance (ciss) @ Vds: 688pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 29.5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 11.2nC @ 10V
• Power - Max: 59W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5517-2

NXP Semiconductors
BUK7Y20-30B
Product data sheet
Fig 6.
Fig 8.
g
(S)
(A)
fs
I
D
100
35
30
25
20
15
80
60
40
20
0
function of drain-source voltage; typical values.
drain current; typical values.
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
20
2
15
10
10
4
8
6
20
V
GS
All information provided in this document is subject to legal disclaimers.
8
003aac921
003aac924
(V) = 5
I
V
D
DS
(A)
5.5
6.5
6
(V)
7
10
30
Rev. 04 — 7 April 2010
Fig 7.
Fig 9.
R
(mΩ)
(A)
DSon
I
D
100
80
60
40
20
40
30
20
10
0
0
of drain current; typical values.
function of gate-source voltage; typical values.
Drain-source on-state resistance as a function
Transfer characteristics: drain current as a
0
0
4.5
N-channel TrenchMOS standard level FET
5
5.5
20
2
6
T
j
= 175 °C
6.5
40
BUK7Y20-30B
7
4
60
T
8
V
j
= 25 °C
GS
6
© NXP B.V. 2010. All rights reserved.
80
(V) = 20
003aac923
003aac926
V
GS
I
D
(A)
(V)
10
15
100
8
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