FDN8601 Fairchild Semiconductor, FDN8601 Datasheet - Page 3

• Manufacturer Part Number: FDN8601
• Description: MOSFET N-CH 100V 2.7A 3SSOT
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDN8601

• Input Capacitance (ciss) @ Vds: 210pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 109 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: SOT-3
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 85.4 mOhms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 1.5 W
• Mounting Style: SMD/SMT
• Fall Time: 3.4 ns
• Gate Charge Qg: 3 nC
• Rise Time: 1.3 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDN8601 Rev. C
Typical Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
12
12
Figure 3. Normalized On- Resistance
9
6
3
0
9
6
3
0
Figure 1.
-75
2
Figure 5. Transfer Characteristics
0
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
D
DS
GS
-50
= 1.5 A
vs Junction Temperature
= 5 V
= 10 V
3
V
T
V
1
-25
GS
J
DS
On-Region Characteristics
,
T
, GATE TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
,
J
DRAIN TO SOURCE VOLTAGE (V)
V
= 150
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
4
0
GS
V
= 7 V
GS
= 8 V
2
o
C
= 10 V
25
P
s
5
T
J
50
T
= -55
J
3
T
= 25 °C unless otherwise noted
J
= 25
75
o
6
C
P
o
s
o
C
100 125 150
C )
4
V
V
7
GS
GS
= 6 V
= 5 V
5
8
3
0.001
0.01
500
400
300
200
100
0.1
20
10
5
4
3
2
1
0
Figure 2.
Figure 4.
0
1
0.2
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
4
Figure 6.
V
V
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
= 5 V
V
= 0 V
SD
T
5
J
0.4
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
= 150
V
On-Resistance vs Gate to
GS
I
Source Voltage
3
D
Source to Drain Diode
,
,
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
I
o
D
C
= 1.5 A
6
0.6
T
T
J
J
= 125
= 25
P
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
s
7
o
V
C
o
GS
C
0.8
V
GS
T
= 6 V
J
= 8 V
= -55
8
T
J
o
9
= 25
C
1.0
V
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V
GS
GS
o
9
= 7 V
C
= 10 V
P
s
1.2
12
10