FDN8601 Fairchild Semiconductor, FDN8601 Datasheet - Page 5

• Manufacturer Part Number: FDN8601
• Description: MOSFET N-CH 100V 2.7A 3SSOT
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDN8601

• Input Capacitance (ciss) @ Vds: 210pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 109 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: SOT-3
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 85.4 mOhms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 1.5 W
• Mounting Style: SMD/SMT
• Fall Time: 3.4 ns
• Gate Charge Qg: 3 nC
• Rise Time: 1.3 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDN8601 Rev. C
Typical Characteristics
0.001
0.01
0.1
2
1
10
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
10
-3
T
J
= 25 °C unless otherwise noted
10
-2
SINGLE PULSE
R
T
JA
= 180
t, RECTANGULAR PULSE DURATION (sec)
o
C/W
10
-1
5
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
= P
DM
x Z
P
TJA
DM
1
100
/t
x R
2
TJA
t
1
+ T
t
2
A
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