FDMC86244 Fairchild Semiconductor, FDMC86244 Datasheet

MOSFET N-CH 150V 15A LL POWER33

FDMC86244

Manufacturer Part Number
FDMC86244
Description
MOSFET N-CH 150V 15A LL POWER33
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMC86244

Input Capacitance (ciss) @ Vds
345pF @ 75V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
134 mOhm @ 2.8A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
2.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
5.9nC @ 10V
Power - Max
2.3W
Mounting Type
*
Package / Case
*
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
134 mOhms
Forward Transconductance Gfs (max / Min)
8 S
Drain-source Breakdown Voltage
150 V
Continuous Drain Current
15 A
Power Dissipation
26 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMC86244
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
FDMC86244
0
Company:
Part Number:
FDMC86244
Quantity:
600
©2010 Fairchild Semiconductor Corporation
FDMC86244 Rev.C
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMC86244
N-Channel Power Trench
150 V, 9.4 A, 134 mΩ
Features
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
, T
Max r
Max r
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant
Symbol
Device Marking
STG
FDMC86244
DS(on)
DS(on)
1 2 3 4
= 134 mΩ at V
= 186 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
8
Top
7
6
GS
GS
5
FDMC86244
= 10 V, I
= 6 V, I
-Continuous (Silicon limited)
-Pulsed
-Continuous
Device
MLP 3.3x3.3
D
D
= 2.4 A
= 2.8 A
T
A
®
= 25 °C unless otherwise noted
Parameter
G
MOSFET
S
D D D D
Bottom
Power 33
Package
S
S
1
T
T
T
T
T
C
C
A
C
General Description
This
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
A
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
DC - DC Conversion
N-Channel
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1a)
D
D
D
D
(Note 3)
MOSFET
5
6
7
8
Tape Width
12 mm
is
-55 to + 150
Ratings
produced using Fairchild
150
±20
125
9.4
2.8
2.3
4.7
15
12
12
26
®
process that has
October 2010
www.fairchildsemi.com
4
3
2
1
3000 units
Quantity
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A

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FDMC86244 Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMC86244 FDMC86244 ©2010 Fairchild Semiconductor Corporation FDMC86244 Rev.C ® MOSFET General Description = 2.8 A This N-Channel D Semiconductor‘s advanced Power Trench = 2 been especially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3. Starting N-ch 1 ©2010 Fairchild Semiconductor Corporation FDMC86244 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C I ...

Page 3

... Figure 3. Normalized On Resistance vs Junction Temperature 12 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMC86244 Rev °C unless otherwise noted μ 4 500 400 300 200 100 50 75 100 125 150 ...

Page 4

... THIS AREA IS 0.1 LIMITED BY r DS(on) SINGLE PULSE T = MAX RATED J 0. 125 C/W θ 0.001 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMC86244 Rev °C unless otherwise noted J 1000 = 50 V 100 V = 100 100 0.1 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDMC86244 Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR ...

Page 6

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMC86244 Rev.C 6 www.fairchildsemi.com ...

Page 7

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDMC86244 Rev.C F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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