FDMC86244 Fairchild Semiconductor, FDMC86244 Datasheet - Page 3

• Manufacturer Part Number: FDMC86244
• Description: MOSFET N-CH 150V 15A LL POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC86244

• Input Capacitance (ciss) @ Vds: 345pF @ 75V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 134 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 5.9nC @ 10V
• Power - Max: 2.3W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 134 mOhms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 150 V
• Continuous Drain Current: 15 A
• Power Dissipation: 26 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMC86244 Rev.C
Typical Characteristics
12
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
12
9
6
3
0
Figure 3. Normalized On Resistance
9
6
3
0
Figure 1.
-75
0
2
Figure 5. Transfer Characteristics
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
V
I
V
D
DS
GS
= 10 V
= 2.8 A
-50
vs Junction Temperature
= 5 V
= 10 V
V
V
1
T
DS
-25
GS
J
On Region Characteristics
,
3
,
, GATE TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
DRAIN TO SOURCE VOLTAGE (V)
0
V
T
GS
J
2
V
= 150
= 5.5 V
GS
25
μ
s
= 6 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
4
o
C
50
T
J
3
= 25 °C unless otherwise noted
75
T
J
= -55
T
5
o
J
100 125 150
C )
= 25
V
4
GS
o
V
V
C
GS
GS
= 4.5 V
o
C
= 5 V
= 4 V
μ
s
5
6
3
0.001
500
400
300
200
100
0.01
0.1
Figure 2.
Figure 4.
20
10
5
4
3
2
1
0
0
Forward Voltage vs Source Current
1
0.2
vs Drain Current and Gate Voltage
2
Figure 6.
0
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
T
V
V
= 0 V
J
GS
SD
= 150
= 4 V
Normalized On-Resistance
0.4
, BODY DIODE FORWARD VOLTAGE (V)
V
On-Resistance vs Gate to
GS
Source Voltage
I
Source to Drain Diode
4
3
D
,
o
,
C
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
V
0.6
GS
T
T
J
J
= 4.5 V
= 25
= 125
μ
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
6
s
I
o
D
C
= 2.8 A
o
V
0.8
C
GS
V
T
GS
J
= 5 V
= -55
= 6 V
T
J
= 25
8
o
9
C
1.0
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V
V
o
GS
C
GS
= 5.5 V
= 10 V
μ
s
1.2
10
12