FDMS86103L Fairchild Semiconductor, FDMS86103L Datasheet - Page 2

• Manufacturer Part Number: FDMS86103L
• Description: MOSFET N-CH 100V 49A LL POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS86103L

• Input Capacitance (ciss) @ Vds: 3710pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Power - Max: 2.5W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.4 mOhms
• Forward Transconductance Gfs (max / Min): 59
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMS86103L Rev.C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
the user's board design.
iss
oss
rss
g
ΔT
ΔT
g
g
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
J
= 25
°
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C, L = 1 mH, I
AS
= 25 A, V
Parameter
DD
= 90 V, V
T
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
a. 50 °C/W when mounted on a
= 25 °C unless otherwise noted
1 in
GS
= 10 V
2
pad of 2 oz copper.
I
I
V
V
V
I
V
V
V
V
V
f = 1 MHz
V
V
V
V
V
V
I
D
D
D
F
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
GS
GS
GS
GS
= 12 A, di/dt = 100 A/μs
= 250 μA, referenced to 25 °C
= 250 μA, V
= 250 μA, referenced to 25 °C
= 80 V, V
= 10 V, I
= 5 V, I
= 50 V, V
= 0 V, I
= 0 V, I
= ±20 V, V
= V
= 10 V, I
= 4.5 V, I
= 50 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 5 V
2
DS
Test Conditions
, I
D
S
S
D
D
D
D
= 2 A
= 12 A
D
= 12 A
GS
GS
GEN
GS
= 250 μA
= 12 A, T
= 12 A
= 12 A,
DS
= 10 A
= 0 V
= 0 V,
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 12 A
J
= 50 V,
= 125 °C
(Note 2)
(Note 2)
θJC
is guaranteed by design while R
b. 125 °C/W when mounted on a
Min
100
1.0
minimum pad of 2 oz copper.
2790
0.70
0.78
10.6
469
Typ
7.2
7.5
1.9
6.4
8.4
1.3
13
35
43
23
57
68
59
22
68
-7
6
7
3710
±100
Max
108
625
1.2
1.3
3.0
23
15
57
13
60
32
90
θCA
35
11
14
8
www.fairchildsemi.com
1
is determined by
mV/°C
mV/°C
Units
mΩ
nC
nC
nC
nC
nC
μA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
V
S