FDMS86103L Fairchild Semiconductor, FDMS86103L Datasheet - Page 3

• Manufacturer Part Number: FDMS86103L
• Description: MOSFET N-CH 100V 49A LL POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS86103L

• Input Capacitance (ciss) @ Vds: 3710pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Power - Max: 2.5W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.4 mOhms
• Forward Transconductance Gfs (max / Min): 59
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMS86103L Rev.C
Typical Characteristics
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
100
80
60
40
20
80
60
40
20
Figure 3. Normalized On- Resistance
0
-75
Figure 1.
0
0
Figure 5. Transfer Characteristics
1
I
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
D
GS
V
-50
= 12 A
DS
vs Junction Temperature
= 10 V
V
= 5 V
DS
V
T
-25
1
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
, DRAIN TO SOURCE VOLTAGE (V)
J
V
,
On-Region Characteristics
V
GS
JUNCTION TEMPERATURE (
V
GS
= 4 V
2
, GATE TO SOURCE VOLTAGE (V)
GS
= 4.5 V
0
= 10 V
T
J
2
= 150
25
μ
s
o
3
C
50
T
J
3
T
μ
= 25 °C unless otherwise noted
J
s
75
T
= -55
J
= 25
o
100 125 150
o
C )
4
C
o
V
4
C
GS
V
GS
= 3.5 V
= 3 V
5
5
3
0.001
0.01
40
30
20
10
100
0.1
5
4
3
2
1
0
0
10
Figure 2.
Figure 4.
2
1
0.0
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
Figure 6.
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
3
V
V
= 0 V
SD
0.2
GS
V
T
20
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
J
GS
= 3 V
On-Resistance vs Gate to
= 150
I
4
Source Voltage
D
,
Source to Drain Diode
,
T
GATE TO SOURCE VOLTAGE (V)
I
D
DRAIN CURRENT (A)
T
J
J
= 12 A
= 125
0.4
o
V
= 25
C
GS
5
40
= 3.5 V
o
o
C
C
μ
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
0.6
6
s
V
60
GS
7
0.8
= 4 V
T
J
T
= -55
J
8
= 25
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80
V
V
1.0
o
GS
GS
C
o
C
9
= 4.5 V
= 10 V
μ
s
100
1.2
10