BUK6226-75C,118 NXP Semiconductors, BUK6226-75C,118 Datasheet

BUK6226-75C,118

Manufacturer Part Number

BUK6226-75C,118

Description

MOSFET N-CH TRENCH DPAK

Manufacturer

NXP Semiconductors

Series

TrenchMOS™r

Datasheet

1.BUK6226-75C118.pdf (14 pages)

Specifications of BUK6226-75C,118

Input Capacitance (ciss) @ Vds

2000pF @ 25V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

29 mOhm @ 12A, 10V

Drain To Source Voltage (vdss)

75V

Current - Continuous Drain (id) @ 25° C

33A

Vgs(th) (max) @ Id

2.8V @ 1mA

Gate Charge (qg) @ Vgs

34nC @ 10V

Power - Max

80W

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

26 mOhms

Drain-source Breakdown Voltage

75 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

33 A

Power Dissipation

80 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free by exemption / RoHS compliant by exemption

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1. Product profile

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)

in a plastic package using advanced TrenchMOS technology. This product has been

designed and qualified to the appropriate AEC Q101 standard for use in high performance

automotive applications.

Table 1.

Symbol

Static characteristics

Avalanche ruggedness

Dynamic characteristics

tot

DS(AL)S

DSon

BUK6226-75C

N-channel TrenchMOS FET

Rev. 01 — 4 October 2010

AEC Q101 compliant

Suitable for standard and logic level

gate drive sources

12 V and 24 V Automotive systems

Electric and electro-hydraulic power

steering

Motors, lamps and solenoid control

Quick reference data

Parameter

drain-source voltage

drain current

total power dissipation

drain-source on-state

resistance

non-repetitive

drain-source avalanche

energy

gate-drain charge

Conditions

see

j(init)

≥ 25 °C; T

= 25 °C; see

= 33 A; V

= 25 A; V

Figure 1

= 25 °C; see

Figure 14

= 10 V; T

= 10 V; I

= 10 V; see

= 50 Ω; V

= 25 °C; unclamped

sup

≤ 175 °C

= 12 A;

= 60 V;

≤ 75 V;

Figure 11

Figure

Suitable for thermally demanding

environments due to 175 °C rating

Start-Stop micro-hybrid applications

Transmission control

Ultra high performance power

switching

= 25 °C;

= 10 V;

Figure 2

13;

Min

Product data sheet

Typ

24.5 29

9.4

Max Unit

mΩ

Related parts for BUK6226-75C,118

BUK6226-75C,118 Summary of contents

Page 1

... BUK6226-75C N-channel TrenchMOS FET Rev. 01 — 4 October 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...

Page 2

... Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6226-75C N-channel TrenchMOS FET Graphic symbol mbb076 Version SOT428 © NXP B.V. 2010. All rights reserved ...

Page 3

... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6226-75C N-channel TrenchMOS FET Min Max - 75 [1] -16 16 [2] -20 20 Figure Figure 130 - 80 -55 175 -55 175 ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK6226-75C Product data sheet 003aae859 150 200 T (°C) mb Fig All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6226-75C N-channel TrenchMOS FET 120 P der (%) 100 Normalized total power dissipation as a function of mounting base temperature =10 μ 100 μ ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6226-75C Product data sheet Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6226-75C N-channel TrenchMOS FET Min Typ Max - - 1.87 003aae795 t P δ = ...

Page 6

... Ω R G(ext) from upper edge of drain mounting base to centre of die ; T j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6226-75C N-channel TrenchMOS FET Min Typ Max = 25 ° -55 ° °C; 1.8 2 ...

Page 7

... V (V) DS Fig 6. 003aae862 R (mΩ ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6226-75C N-channel TrenchMOS FET Min Typ = 25 ° Forward transconductance as a function of drain current; typical values 80 ...

Page 8

... Fig 10. Sub-threshold drain current as a function of 003aae865 4.5 5.0 a 2.5 1.5 8.0 0 (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6226-75C N-channel TrenchMOS FET -1 -2 min typ max - gate-source voltage ...

Page 9

... Fig 14. Gate-source voltage as a function of gate 003aae864 (A) C iss C oss C rss (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6226-75C N-channel TrenchMOS FET 10 GS (V) 7.5 V 14V charge; typical values 50 I ...

Page 10

... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6226-75C N-channel TrenchMOS FET min 10.4 2.95 2.285 4.57 0.5 9.6 2 ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK6226-75C v.1 20101004 BUK6226-75C Product data sheet Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6226-75C N-channel TrenchMOS FET ...

Page 12

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6226-75C N-channel TrenchMOS FET © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6226-75C N-channel TrenchMOS FET Trademarks © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 4 October 2010 Document identifier: BUK6226-75C ...

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