BUK6226-75C,118 NXP Semiconductors, BUK6226-75C,118 Datasheet - Page 2

• Manufacturer Part Number: BUK6226-75C,118
• Description: MOSFET N-CH TRENCH DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6226-75C,118

• Input Capacitance (ciss) @ Vds: 2000pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 29 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Power - Max: 80W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 26 mOhms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 33 A
• Power Dissipation: 80 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK6226-75C
Product data sheet
Pin
1
2
3
mb
Type number
BUK6226-75C
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Package
Name
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 4 October 2010
Simplified outline
SOT428 (DPAK)
1
mb
2
3
Graphic symbol
BUK6226-75C
N-channel TrenchMOS FET
mbb076
G
© NXP B.V. 2010. All rights reserved.
D
S
Version
SOT428
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