BUK653R7-30C,127 NXP Semiconductors, BUK653R7-30C,127 Datasheet - Page 13

• Manufacturer Part Number: BUK653R7-30C,127
• Description: MOSFET N-CH TRENCH SOT78A
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK653R7-30C,127

• Input Capacitance (ciss) @ Vds: 4707pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.9 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Power - Max: 158W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

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BUK653R7-30C
Product data sheet
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Rev. 3 — 13 October 2010
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9.4
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
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N-channel TrenchMOS intermediate level FET
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