BUK653R7-30C NXP Semiconductors, BUK653R7-30C Datasheet
BUK653R7-30C
Specifications of BUK653R7-30C
Related parts for BUK653R7-30C
BUK653R7-30C Summary of contents
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... BUK653R7-30C N-channel TrenchMOS intermediate level FET Rev. 3 — 13 October 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...
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... V; see GS see Figure 14 Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 October 2010 BUK653R7-30C N-channel TrenchMOS intermediate level FET Min ≤ sup = Figure 13; Graphic symbol ...
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... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ 100 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 October 2010 BUK653R7-30C Min Max - 30 [1] -16 16 [2] -20 20 [3] Figure 1 - 100 [3] Figure 1 - 100 - 583 - 158 -55 175 ...
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... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 October 2010 BUK653R7-30C 50 100 150 T 003aae371 =10 μ 100 μ 100 (V) DS © NXP B.V. 2010. All rights reserved. ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK653R7-30C Product data sheet N-channel TrenchMOS intermediate level FET Conditions see Figure 4 vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 October 2010 BUK653R7-30C Min Typ Max - - 0. 003aae304 t p δ = ...
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... Ω R G(ext) from drain lead 6 mm from package to centre of die °C j from source lead to source bond pad °C j All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 October 2010 BUK653R7-30C Min Typ Max Unit 1.8 2.3 2 3.3 V 0.8 ...
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... V (V) GS Fig 6. 003aae306 R (mΩ) 4.0 3.8 3.6 3.4 3.3 V (V) = 3 (V) DS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 October 2010 BUK653R7-30C N-channel TrenchMOS intermediate level FET Min Typ - 0 125 g fs (S) 100 Forward transconductance as a function of drain current ...
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... I (A) D Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 October 2010 BUK653R7-30C 003aad806 min typ max 120 © NXP B.V. 2010. All rights reserved. 4 (V) ...
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... Product data sheet Q GD 003aaa508 Fig 14. Gate-source voltage as a function of gate 003aae309 ( (V) DS Fig 16. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 October 2010 BUK653R7-30C N-channel TrenchMOS intermediate level FET ( 14V charge; typical values 100 ...
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... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 October 2010 BUK653R7-30C N-channel TrenchMOS intermediate level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13 ...
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... N-channel TrenchMOS intermediate level FET Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 October 2010 BUK653R7-30C Supersedes BUK653R7-30C v.2 BUK653R7-30C v.1 © NXP B.V. 2010. All rights reserved ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 October 2010 BUK653R7-30C © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 13 October 2010 BUK653R7-30C Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 13 October 2010 Document identifier: BUK653R7-30C ...