BUK6507-75C,127 NXP Semiconductors, BUK6507-75C,127 Datasheet - Page 7

• Manufacturer Part Number: BUK6507-75C,127
• Description: MOSFET N-CH TRENCH SOT78A
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6507-75C,127

• Input Capacitance (ciss) @ Vds: 7600pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 123nC @ 10V
• Power - Max: 204W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 mOhms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 204 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
Table 6.
BUK6507-75C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
g
(S)
(A)
I
fs
D
150
120
160
120
90
60
30
80
40
0
0
drain current; typical values
function of gate-source voltage; typical values
T
Forward transconductance as a function of
V
Transfer characteristics: drain current as a
0
0
j
DS
Characteristics
= 25°C; V
= 25 V
Parameter
source-drain voltage
reverse recovery time
recovered charge
1
20
DS
T
= 25 V
j
= 25 °C
2
…continued
40
3
60
T
j
= 175 °C
All information provided in this document is subject to legal disclaimers.
4
003aae548
003aae546
V
I
D
GS
(A)
(V)
Conditions
I
see
I
V
80
Rev. 02 — 4 October 2010
S
S
5
GS
= 25 A; V
= 20 A; dI
Figure 16
= 0 V; V
GS
S
DS
/dt = -100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 25 V
R
(mΩ)
(A)
DSon
I
D
160
120
80
40
20
16
12
8
4
0
0
j
function of drain-source voltage; typical values
of gate-source voltage; typical values
T
Output characteristics: drain current as a
T
Drain-source on-state resistance as a function
0
0
= 25 °C;
j
j
= 25°C; t
= 25°C; I
V
GS
2
(V) = 10
p
D
= 300 μs
25 A
1
4
BUK6507-75C
Min
-
-
-
5
N-channel TrenchMOS FET
4.5
6
2
Typ
0.8
54
129
© NXP B.V. 2010. All rights reserved.
V
8
DS
003aae547
003aae549
V
GS
(V)
Max
1.2
-
-
4.0
3.4
3.8
3.6
3.2
(V)
10
3
Unit
V
ns
nC
7 of 14