BUK6507-55C NXP Semiconductors, BUK6507-55C Datasheet
![MOSFET,N CH,55V,72A,SOT78](/photos/41/53/415315/sot078a_3d_sml.gif)
BUK6507-55C
Specifications of BUK6507-55C
Related parts for BUK6507-55C
BUK6507-55C Summary of contents
Page 1
... BUK6507-55C N-channel TrenchMOS logic and standard level FET Rev. 01 — 12 October 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...
Page 2
... see GS see Figure 14 Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 01 — 12 October 2010 BUK6507-55C Min Typ ≤ sup = Figure 13; Graphic symbol mbb076 © ...
Page 3
... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ 100 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 01 — 12 October 2010 BUK6507-55C Min Max - 55 [1] -16 16 [2] -20 20 Figure 1 - 100 Figure 405 - 158 -55 175 -55 175 [3] ...
Page 4
... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature DC 10 All information provided in this document is subject to legal disclaimers. Rev. 01 — 12 October 2010 BUK6507-55C 0 50 100 150 T =10 μ 100 μ 100 (V) DS © NXP B.V. 2010. All rights reserved. ...
Page 5
... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6507-55C Product data sheet N-channel TrenchMOS logic and standard level FET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 01 — 12 October 2010 BUK6507-55C Min Typ Max - - 0.95 003aae317 δ ...
Page 6
... Ω R G(ext) from upper edge of drain mounting base to centre of die ; °C j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 01 — 12 October 2010 BUK6507-55C Min Typ Max = 25 ° -55 ° 1.8 2.3 2 3.3 0.8 ...
Page 7
... (V) GS Fig 8. Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 12 October 2010 BUK6507-55C Min Typ = 25 ° 003aae892 V ( 4.5 GS 0 300 μs = 25°C; t ...
Page 8
... V (V) GS Fig 10. Gate-source threshold voltage as a function of 003aae932 4.0 4.5 5.0 10 (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 01 — 12 October 2010 BUK6507-55C 4 3 max typ 2 min 120 junction temperature 2 1.5 1 0.5 ...
Page 9
... N-channel TrenchMOS logic and standard level FET V ( 003aaa508 Fig 14. Gate-source voltage as a function of gate 003aae897 (A) C iss C oss C rss (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 01 — 12 October 2010 BUK6507-55C 25° charge; typical values 100 I S ...
Page 10
... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 01 — 12 October 2010 BUK6507-55C mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2.79 3.6 2.7 ...
Page 11
... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK6507-55C v.1 20101012 BUK6507-55C Product data sheet N-channel TrenchMOS logic and standard level FET Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 01 — 12 October 2010 ...
Page 12
... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 01 — 12 October 2010 BUK6507-55C © NXP B.V. 2010. All rights reserved ...
Page 13
... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 01 — 12 October 2010 BUK6507-55C Trademarks © NXP B.V. 2010. All rights reserved ...
Page 14
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 12 October 2010 Document identifier: BUK6507-55C ...