BUK7Y18-75B,115 NXP Semiconductors, BUK7Y18-75B,115 Datasheet
BUK7Y18-75B,115
Specifications of BUK7Y18-75B,115
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BUK7Y18-75B,115 Summary of contents
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... BUK7Y18-75B N-channel TrenchMOS standard level FET Rev. 03 — 7 April 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...
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... see GS Simplified outline SOT669 (LFPAK) Description plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 April 2010 BUK7Y18-75B N-channel TrenchMOS standard level FET Min ≤ sup = Figure 14 Graphic symbol G mbb076 ...
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... ° see Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped GS j(init) see Figure 3 All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 April 2010 BUK7Y18-75B Min Typ Max - - - 34 198 - - 105 -55 - 175 -55 - 175 - - 49 ...
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... T (°C) mb Fig ( All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 April 2010 BUK7Y18-75B N-channel TrenchMOS standard level FET 120 100 150 Normalized total power dissipation as a function of mounting base temperature 003aac487 (1) (2) ( (ms) AL 03na19 200 T (°C) mb © ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration. BUK7Y18-75B Product data sheet N-channel TrenchMOS standard level FET DC 10 Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 April 2010 BUK7Y18-75B 003aad516 = 10 μ 100 μ 100 (V) DS Min ...
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... Figure see Figure MHz °C; see Figure 1.5 Ω Ω R G(ext ° see Figure /dt = -100 A/µ All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 April 2010 BUK7Y18-75B Min Typ Max 4 0. 500 - 2 100 - 2 100 - - 43 14. 1630 2173 - ...
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... V (V) DS Fig 7. 003aad511 (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 April 2010 BUK7Y18-75B N-channel TrenchMOS standard level FET 80 4.3 4.5 4.7 4.9 R DSon (mΩ Drain-source on-state resistance as a function of drain current; typical values. 40 ...
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... Fig 11. Sub-threshold drain current as a function of 03nq03 R DSON (mΩ) 100 140 180 T (°C) j Fig 13. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 April 2010 BUK7Y18-75B N-channel TrenchMOS standard level FET −1 min typ max −2 −3 −4 −5 − ...
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... Fig 15. Input, output and reverse transfer capacitances ( 175 ° ° 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 April 2010 BUK7Y18-75B N-channel TrenchMOS standard level FET function of drain-source voltage; typical values. 003aad512 0 (V) SD © NXP B.V. 2010. All rights reserved. ...
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... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 April 2010 BUK7Y18-75B N-channel TrenchMOS standard level FET detail (1) (1) ( 5.0 3.3 6.2 ...
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... Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 April 2010 BUK7Y18-75B Supersedes BUK7Y18-75B_2 BUK7Y18-75B_1 © NXP B.V. 2010. All rights reserved ...
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... All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 April 2010 BUK7Y18-75B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
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... TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 April 2010 BUK7Y18-75B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 7 April 2010 Document identifier: BUK7Y18-75B ...