BUK7Y18-75B,115 NXP Semiconductors, BUK7Y18-75B,115 Datasheet - Page 7

• Manufacturer Part Number: BUK7Y18-75B,115
• Description: MOSFET N-CH 75V 49A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7Y18-75B,115

• Input Capacitance (ciss) @ Vds: 2173pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Power - Max: 105W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5516-2

NXP Semiconductors
BUK7Y18-75B
Product data sheet
Fig 6.
Fig 8.
g
(S)
(A)
fs
I
D
40
30
20
10
56
44
32
20
0
function of drain-source voltage; typical values.
drain current; typical values.
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
20
10
1
20
2
3
40
V
GS
4
All information provided in this document is subject to legal disclaimers.
I
003aad509
D
(V) =
V
003aad511
(A)
DS
(V)
5.1
4.9
4.5
4.3
4.7
60
5
Rev. 03 — 7 April 2010
Fig 7.
Fig 9.
R
(mΩ)
(A)
I
DSon
D
80
60
40
20
40
30
20
10
0
0
of drain current; typical values.
function of gate-source voltage; typical values.
Drain-source on-state resistance as a function
Transfer characteristics: drain current as a
0
0
N-channel TrenchMOS standard level FET
4.3
4.5
10
2
T
j
4.7
= 175 °C
BUK7Y18-75B
20
4.9
4
V
30
GS
25 °C
V
© NXP B.V. 2010. All rights reserved.
GS
003aad510
(V) =
003aad552
I
D
(V)
(A)
10
5.1
20
40
6
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