BUK6E3R4-40C,127 NXP Semiconductors, BUK6E3R4-40C,127 Datasheet
BUK6E3R4-40C,127
Specifications of BUK6E3R4-40C,127
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BUK6E3R4-40C,127 Summary of contents
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... BUK6E3R4-40C N-channel TrenchMOS intermediate level FET Rev. 3 — 14 October 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...
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... see GS see Figure 14 Simplified outline SOT226 (I2PAK) Description plastic single-ended package (I2PAK); TO-262 All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 October 2010 BUK6E3R4-40C N-channel TrenchMOS intermediate level FET Min ≤ sup = Figure 13; Graphic symbol G mbb076 Typ Max Unit ...
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... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ 100 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 October 2010 BUK6E3R4-40C Min Max - 40 [1] -20 20 [2] -16 16 [3] Figure 1 - 100 [3] Figure 1 - 100 - 657 - 204 -55 175 ...
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... T (°C) mb Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 October 2010 BUK6E3R4-40C 0 50 100 150 T Normalized total power dissipation as a function of mounting base temperature =10 μ 100 μ 100 (V) DS © NXP B.V. 2010. All rights reserved. ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6E3R4-40C Product data sheet N-channel TrenchMOS intermediate level FET Conditions see Figure 4 vertical in free air −4 − All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 October 2010 BUK6E3R4-40C Min Typ Max - - 0. 003aae330 t P δ = ...
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... Ω R G(ext) from drain lead 6 mm from package to centre of die °C j from source lead to source bond pad °C j All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 October 2010 BUK6E3R4-40C Min Typ Max Unit 1.8 2.3 2 3.3 V 0.8 ...
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... 003aae331 R DSon (mΩ (A) D Fig 6. 003aae333 I ( ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 October 2010 BUK6E3R4-40C N-channel TrenchMOS intermediate level FET Min Typ - 0 Drain-source on-state resistance as a function of gate-source voltage; typical values 250 6.0 5.0 ...
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... I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 October 2010 BUK6E3R4-40C N-channel TrenchMOS intermediate level FET 4 V GS(th) (V) 3 max @1mA 2 typ @1mA min @2.5mA 1 0 -60 ...
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... Fig 14. Gate-source voltage as a function of gate 003aae337 C iss C oss C rss (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 October 2010 BUK6E3R4-40C N-channel TrenchMOS intermediate level FET 100 ° charge; typical values ...
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... max 0.7 1.6 10.3 11 2.54 0.4 1.2 9.7 REFERENCES JEDEC JEITA TO-262 All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 October 2010 BUK6E3R4-40C N-channel TrenchMOS intermediate level FET mounting base 15.0 3.30 2.6 13.5 2.79 2.2 EUROPEAN PROJECTION SOT226 ...
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... N-channel TrenchMOS intermediate level FET Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 October 2010 BUK6E3R4-40C Supersedes BUK6E3R4-40C v.2 BUK6E3R4-40C v.1 © NXP B.V. 2010. All rights reserved ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 October 2010 BUK6E3R4-40C © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 October 2010 BUK6E3R4-40C Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 14 October 2010 Document identifier: BUK6E3R4-40C ...