BUK6E3R4-40C,127 NXP Semiconductors, BUK6E3R4-40C,127 Datasheet - Page 9

• Manufacturer Part Number: BUK6E3R4-40C,127
• Description: MOSFET N-CH TRENCH I2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6E3R4-40C,127

• Input Capacitance (ciss) @ Vds: 8020pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 125nC @ 10V
• Power - Max: 204W
• Mounting Type: *
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 204 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK6E3R4-40C
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
(pF)
10
C
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
V
−1
GS
V
V
V
GS(pl)
DS
GS(th)
GS
= 0 V; f = 1 MHz
Q
GS1
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
DS
All information provided in this document is subject to legal disclaimers.
003aaa508
003aae337
C
C
C
(V)
oss
rss
iss
10
Rev. 3 — 14 October 2010
2
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of
V
(V)
(A)
I
GS
S
100
N-channel TrenchMOS intermediate level FET
10
80
60
40
20
8
6
4
2
0
0
charge; typical values
source-drain (diode forward) voltage; typical
values
T
V
0
0
j
GS
= 25 °C; I
= 0 V
14 V
0.3
T j = 175 °C
D
50
= 25 A
BUK6E3R4-40C
0.6
100
0.9
V
T j = 25 °C
Q
DS
© NXP B.V. 2010. All rights reserved.
V
G
003aae336
003aae339
SD
= 32 V
(nC)
(V)
150
1.2
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