BUK663R5-55C,118 NXP Semiconductors, BUK663R5-55C,118 Datasheet - Page 7

• Manufacturer Part Number: BUK663R5-55C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK663R5-55C,118

• Input Capacitance (ciss) @ Vds: 11516pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 191nC @ 10V
• Power - Max: 263W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 263 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
Table 6.
BUK663R5-55C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 6.
Fig 8.
SD
r
g
(S)
(A)
I
fs
150
120
D
90
60
30
80
60
40
20
0
0
drain current; typical values
function of gate-source voltage; typical values
Forward transconductance as a function of
Transfer characteristics: drain current as a
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
10
1
20
…continued
T
T
2
j
= 175 °C
j
= 25 °C
30
3
Conditions
I
see
I
V
40
All information provided in this document is subject to legal disclaimers.
S
S
V
DS
003aae388
003aae390
= 25 A; V
= 20 A; dI
GS
I
D
Figure 17
= 25 V
(A)
(V)
Rev. 2 — 23 December 2010
50
4
GS
S
/dt = -100 A/µs; V
= 0 V; T
Fig 7.
Fig 9.
j
= 25 °C;
R
(mΩ)
DSon
(A)
I
100
D
N-channel TrenchMOS intermediate level FET
16
12
80
60
40
20
8
4
0
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
Output characteristics: drain current as a
Drain-source on-state resistance as a function
GS
0
0
= 0 V;
10
8.0
6.0
0.2
4
BUK663R5-55C
0.4
5.0
Min
-
-
-
4.5
8
0.6
Typ
0.85
65
148
12
© NXP B.V. 2010. All rights reserved.
V
0.8
GS
V
003aae389
003aae391
GS
V
(V) =
DS
Max
1.2
-
-
(V)
3.4
3.3
3.8
3.6
4.0
(V)
16
1
Unit
V
ns
nC
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