BUK663R5-55C NXP Semiconductors, BUK663R5-55C Datasheet
BUK663R5-55C
Specifications of BUK663R5-55C
Related parts for BUK663R5-55C
BUK663R5-55C Summary of contents
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... BUK663R5-55C N-channel TrenchMOS intermediate level FET Rev. 2 — 23 December 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...
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... V; see GS see Figure 14 Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 December 2010 BUK663R5-55C N-channel TrenchMOS intermediate level FET Min ≤ sup = Figure 15; Graphic symbol G ...
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... T pulsed ° ≤ 120 sup °C; unclamped; GS j(init) see Figure 3 see Figure 3 All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 December 2010 BUK663R5-55C Min Max - 55 [1] -16 16 [2] -20 20 [3] Figure 1 - 120 [3] Figure 1 - 120 - 739 - 263 ...
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... T (°C) mb Fig ( −1 10 −3 −2 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 December 2010 BUK663R5-55C N-channel TrenchMOS intermediate level FET 100 150 Normalized total power dissipation as a function of mounting base temperature 003aae402 (1) (2) ( (ms) AL 03aa16 200 T (°C) mb © ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK663R5-55C Product data sheet Limit DSon Conditions see Figure 5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 December 2010 BUK663R5-55C N-channel TrenchMOS intermediate level FET (V) DS Min Typ - - −2 − ...
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... Ω R G(ext) from upper edge of drain mounting base to centre of die °C j from source lead to source bond pad °C j All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 December 2010 BUK663R5-55C Min Typ Max Unit 1.8 2.3 2 3.3 V 0.8 ...
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... Figure /dt = -100 A/µ 003aae388 (A) D Fig 7. 003aae390 R (mΩ (V) GS Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 December 2010 BUK663R5-55C N-channel TrenchMOS intermediate level FET Min Typ - 0. 148 100 6 4.5 8.0 (A) 5 0.2 0.4 0.6 Output characteristics: drain current as a function of drain-source voltage ...
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... I (A) D Fig 13. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 December 2010 BUK663R5-55C N-channel TrenchMOS intermediate level FET 4 3 max @1mA 2 typ @1mA min @2.5mA 120 junction temperature 2 ...
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... Fig 15. Gate-source voltage as a function of gate 003aae394 (A) C iss C oss C rss (V) DS Fig 17. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 December 2010 BUK663R5-55C N-channel TrenchMOS intermediate level FET ( 100 charge; typical values ...
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... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 December 2010 BUK663R5-55C mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2010. All rights reserved. ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK663R5-55C v.2 20101223 • Modifications: Status changed from objective to product. • Various changes to content. BUK663R5-55C v.1 20100803 BUK663R5-55C Product data sheet N-channel TrenchMOS intermediate level FET Data sheet status Change notice ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 December 2010 BUK663R5-55C © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 December 2010 BUK663R5-55C Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 23 December 2010 Document identifier: BUK663R5-55C ...