AUIRFR120ZTR International Rectifier, AUIRFR120ZTR Datasheet

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AUIRFR120ZTR

Manufacturer Part Number
AUIRFR120ZTR
Description
MOSFET N-CH 100V 8.7A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of AUIRFR120ZTR

Input Capacitance (ciss) @ Vds
310nC @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 5.2A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
8.7A
Vgs(th) (max) @ Id
4V @ 25µA
Gate Charge (qg) @ Vgs
10nC @ 10V
Power - Max
35W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features
l
l
l
l
l
l
l
Description
Specifically designed for Automotive applications, this
HEXFET
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
HEXFET
*Qualification standards can be found at http://www.irf.com/
www.irf.com
I
I
I
P
V
E
E
I
E
T
T
R
R
R
Thermal Resistance
D
D
DM
AR
J
STG
D
GS
AS
AS
AR
JC
JA
JA
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
@T
(Tested )
C
C
C
®
®
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Power Dissipation
is a registered trademark of International Rectifier.
Power MOSFET utilizes the latest processing
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy(Thermally limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
A
) is 25°C, unless otherwise specified.
Ã
Parameter
Parameter
AUTOMOTIVE MOSFET
GS
GS
g
@ 10V
@ 10V
i
G
h
Gate
d
D
AUIRFR120Z
G
D-Pak
S
D
G
D
HEXFET
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
–––
–––
–––
S
V
R
I
10 lbf
D
(BR)DSS
DS(on)
-55 to + 175
Drain
y
Max.
in (1.1N
0.23
D
± 20
AUIRFR120Z
AUIRFU120Z
8.7
6.1
35
35
18
20
®
D
max.
typ.
Power MOSFET
y
AUIRFU120Z
m)
Max.
4.28
110
50
I-Pak
G
PD - 96345
D
Source
150m
190m
S
100V
8.7A
S
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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AUIRFR120ZTR Summary of contents

Page 1

... Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting Torque, 6- screw Thermal Resistance R Junction-to-Case JC R Junction-to-Ambient (PCB mount Junction-to-Ambient JA ® HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com AUTOMOTIVE MOSFET D-Pak AUIRFR120Z G Gate Parameter @ 10V GS @ 10V ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ Limited starting T = ...

Page 4

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 175°C 10.0 1 25°C ...

Page 5

0V MHZ C iss = SHORTED C rss = C gd 400 C oss = Ciss 300 200 100 Coss ...

Page 6

Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ...

Page 7

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 8

Duty Cycle = Single Pulse 0.01 0.05 1 0.10 0.1 0.01 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 20 TOP Single Pulse BOTTOM 1% Duty Cycle 5. ...

Page 9

D.U.T + ƒ ‚ -  SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 10

10 www.irf.com ...

Page 11

www.irf.com 11 ...

Page 12

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 13

... Ordering Information Base part Package Type AUIRFR120Z DPak AUIRFU120Z IPak www.irf.com Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 Tape and Reel Right 3000 Tube 75 Complete Part Number AUIRFR120Z AUIRFR120ZTR AUIRFR120ZTRL AUIRFR120ZTRR AUIRFU120Z 13 ...

Page 14

... Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product ...

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