AUIRFR120ZTR International Rectifier, AUIRFR120ZTR Datasheet - Page 2

• Manufacturer Part Number: AUIRFR120ZTR
• Description: MOSFET N-CH 100V 8.7A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFR120ZTR

• Input Capacitance (ciss) @ Vds: 310nC @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 5.2A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 8.7A
• Vgs(th) (max) @ Id: 4V @ 25µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Power - Max: 35W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Static Electrical Characteristics @ T
Dynamic Electrical Characteristics @ T
Diode Characteristics
Notes  through
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
V
D
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
2
g
gs
gd
rr
(BR)DSS
eff.
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
‡
Parameter
are on page 3
Parameter
™
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
16
0.084
–––
150
–––
–––
–––
–––
–––
–––
310
150
–––
–––
–––
6.9
1.6
3.1
8.3
4.5
7.5
26
27
23
41
24
26
57
24
23
-200
–––
–––
190
–––
250
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.0
8.7
1.3
20
10
35
36
35
V/°C
m
µA
nA
nC
nH
nC
ns
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 5.2A
= 5.2A
= 25°C, I
= 25°C, I
= 53
= V
= 25V, I
= 100V, V
= 100V, V
= 80V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 50V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
e
e
Conditions
D
Conditions
D
DS
S
F
D
D
DS
DS
= 250µA
= 25µA
= 5.2A, V
= 5.2A
= 5.2A, V
= 5.2A
GS
GS
= 0V to 80V
= 1.0V, ƒ = 1.0MHz
= 80V, ƒ = 1.0MHz
e
= 0V
= 0V, T
www.irf.com
D
e
= 1mA
GS
DD
J
G
= 50V
= 125°C
= 0V
f
e
S
D