AUIRFR5305TRL International Rectifier, AUIRFR5305TRL Datasheet - Page 2

• Manufacturer Part Number: AUIRFR5305TRL
• Description: MOSFET P-CH 55V 31A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFR5305TRL

• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ƒ
*** Uses typical socket mount.
AUIRFR/U5305
V
∆V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q

‚
* *When mounted on 1" square PCB (FR-4 or G-10 Material).
Static Electrical Characteristics @ T
Dynamic Electrical Characteristics @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
D
S
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
For recommended footprint and soldering techniques refer to application note #AN-994.
2
Repetitive rating; pulse width limited by
(BR)DSS
max. junction temperature. (See Fig. 11)
I
V
T
R
SD
J
DD
G
≤ 175°C
≤ -16A, di/dt ≤ -280A/µs, V
= 25Ω, I
= -25V, starting T
/∆T
J
AS
= -16A. (See Figure 12)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
J
= 25°C, L = 2.1mH
Parameter
DD
≤ V
™
(BR)DSS
Parameter
Parameter
,
J
= 25°C (unless otherwise specified)
„
… This is applied for I-PAK, L
† Uses IRF5305 data and test conditions.
J
lead and center of die contact.
= 25°C (unless otherwise specified)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Min.
Min.
Min.
–––
–––
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.0
-55
S
of D-PAK is measured between
-0.034
Typ.
Typ.
1200
Typ.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
520
250
–––
–––
–––
170
4.5
7.5
14
66
39
63
71
Max.
0.065
Max.
Max.
-250
-100
-110
–––
–––
-4.0
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
-1.3
110
250
-25
-31
63
13
29
Units
Units
Units
V/°C
nC
nH
nC
µA
nA
pF
ns
ns
V
Ω
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz,see Fig.5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -16A
= -16A
= 25°C, I
= 25°C, I
= 6.8 Ω
= 1.6 Ω See Fig.10
= V
= -25V, I
= -55V, V
= -44V, V
= -44V
= -25V
= 0V, I
= -10V, I
= -20V
= 20V
= -10V See Fig.6 and 13
= -28V
= 0V
GS
, I
D
D
S
F
Conditions
Conditions
Conditions
= -250µA
D
D
= -250µA
GS
GS
= -16A, V
= -16A
= -16A
= -16A
fh
= 0V
= 0V, T
www.irf.com
D
h
f
G
= -1mA
h
fh
GS
J
= 150°C
G
= 0V
fh
S
D
f
S
D