AUIRFR5305TRL International Rectifier, AUIRFR5305TRL Datasheet - Page 8

• Manufacturer Part Number: AUIRFR5305TRL
• Description: MOSFET P-CH 55V 31A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFR5305TRL

• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

AUIRFR/U5305
8
V
GS
*
Re-Applied
Voltage
Reverse
Recovery
Current

*
** Use P-Channel Driver for P-Channel Measurements
Reverse Polarity for P-Channel
‚
+
-
R
G
D.U.T
***
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Peak Diode Recovery dv/dt Test Circuit
V
GS
P.W.
SD
DS
= 5.0V for Logic Level and 3V Drive Devices
Waveform
Waveform
Fig 14. For P-Channel HEXFETS
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
• dv/dt controlled by R
• I
• D.U.T. - Device Under Test
SD
Diode Recovery
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
• Low Stray Inductance
dv/dt
• Ground Plane
• Low Leakage Inductance
Forward Drop
Current Transformer
di/dt
-
D =
G
„
Period
P.W.
+
[
[
V
V
I
SD
GS
DD
]
=10V
+
-
V
DD
] ***
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