AUIRFZ44ZSTRR International Rectifier, AUIRFZ44ZSTRR Datasheet - Page 5

• Manufacturer Part Number: AUIRFZ44ZSTRR
• Description: MOSFET N-CH 55V 51A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFZ44ZSTRR

• Input Capacitance (ciss) @ Vds: 1420pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13.9 mOhm @ 31A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 51A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Power - Max: 80W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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10000
1000
0.10
0.01
1000
100
100
10
1
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
T J = 175°C
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
C iss
C oss
C rss
Forward Voltage
0.5
T J = 25°C
f = 1 MHZ
1.0
10
1.5
V GS = 0V
2.0
100
1000
100
0.1
10
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
12.0
10.0
8.0
6.0
4.0
2.0
0.0
Fig 8. Maximum Safe Operating Area
V DS , Drain-to-Source Voltage (V)
0
Fig 6. Typical Gate Charge vs.
I D = 31A
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
Gate-to-Source Voltage
5
Q G Total Gate Charge (nC)
10
V DS = 44V
V DS = 28V
V DS = 11V
10msec
1msec
100µsec
100
15
20
1000
25
5
30