AUIRFZ44ZSTRR International Rectifier, AUIRFZ44ZSTRR Datasheet - Page 6

• Manufacturer Part Number: AUIRFZ44ZSTRR
• Description: MOSFET N-CH 55V 51A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFZ44ZSTRR

• Input Capacitance (ciss) @ Vds: 1420pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13.9 mOhm @ 31A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 51A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Power - Max: 80W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

55
50
45
40
35
30
25
20
15
10
6
5
0
25
0.001
Fig 9. Maximum Drain Current vs.
0.01
0.1
10
1
1E-006
50
T C , Case Temperature (°C)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
Case Temperature
0.02
75
0.20
0.01
0.10
0.05
100
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
125
150
0.0001
175
t 1 , Rectangular Pulse Duration (sec)
0.001
J
J
1
Ci= i Ri
1
Ci
2.5
2.0
1.5
1.0
0.5
i Ri
R
Fig 10. Normalized On-Resistance
1
R
-60 -40 -20 0
1
0.01
I D = 31A
V GS = 10V
2
R
2
2
R
2
T J , Junction Temperature (°C)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
vs. Temperature
R
3
3
R
3
3
20 40 60 80 100 120 140 160 180
C
Ri (°C/W)
0.1
0.8487
0.6254
0.3974
0.00044
0.00221
0.01173
i (sec)
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