AUIRFS4310 International Rectifier, AUIRFS4310 Datasheet - Page 4

• Manufacturer Part Number: AUIRFS4310
• Description: MOSFET N-CH 100V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFS4310

• Input Capacitance (ciss) @ Vds: 7670pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 250nC @ 10V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 130 A
• Power Dissipation: 300 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 170 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
4
12000
10000
8000
6000
4000
2000
1000
1000
100
100
10
10
0
1
1
0.1
3.0
Fig 3. Typical Transfer Characteristics
1
Fig 1. Typical Output Characteristics
T J = 175°C
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
4.0
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
4.5V
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
1
Ciss
5.0
Coss
Crss
V DS = 50V
T J = 25°C
60µs PULSE WIDTH
Tj = 25°C
f = 1 MHZ
10
60µs PULSE WIDTH
6.0
10
7.0
100
8.0
100
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
3.0
2.5
2.0
1.5
1.0
0.5
20
16
12
10
8
4
0
-60 -40 -20 0
0.1
0
Fig 2. Typical Output Characteristics
I D = 75A
TOP
BOTTOM
I D = 75A
V GS = 10V
40
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G Total Gate Charge (nC)
80
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
V DS = 80V
VDS= 50V
VDS= 20V
20 40 60 80 100 120 140 160 180
1
4.5V
120
Tj = 175°C
60µs PULSE WIDTH
160
10
200
240
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280
100