AUIRFS4310 International Rectifier, AUIRFS4310 Datasheet - Page 5

• Manufacturer Part Number: AUIRFS4310
• Description: MOSFET N-CH 100V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFS4310

• Input Capacitance (ciss) @ Vds: 7670pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 250nC @ 10V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 130 A
• Power Dissipation: 300 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 170 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000.0
140
120
100
100.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10.0
80
60
40
20
1.0
0.1
Fig 11. Typical C
0
0
25
0.2
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current vs.
0.4
20
T J = 175°C
50
V DS, Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
T C , Case Temperature (°C)
0.6
Case Temperature
Forward Voltage
40
75
0.8
T J = 25°C
OSS
1.0
100
60
Limited By Package
Stored Energy
1.2
125
80
1.4
V GS = 0V
1.6
150
100
1.8
175
2.0
120
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
10000
1000
2400
2000
1600
1200
120
115
110
105
100
800
400
100
0.1
10
0
1
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0
25
1
Tc = 25°C
Tj = 175°C
Single Pulse
Starting T J , Junction Temperature (°C)
V DS , Drain-toSource Voltage (V)
50
T J , Junction Temperature (°C)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
20 40 60 80 100 120 140 160 180
75
100
TOP
BOTTOM
100
125
100µsec
1msec
10msec
DC
17A
12A
75A
I D
150
1000
175
5