IPD65R380C6 Infineon Technologies, IPD65R380C6 Datasheet

MOSFET N-CH 650V 10.6A TO252-3

IPD65R380C6

Manufacturer Part Number
IPD65R380C6
Description
MOSFET N-CH 650V 10.6A TO252-3
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of IPD65R380C6

Input Capacitance (ciss) @ Vds
710pF @ 100V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 3.2A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
10.6A
Vgs(th) (max) @ Id
3.5V @ 320µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Power - Max
83W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.34 Ohms
Drain-source Breakdown Voltage
700 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
10.6 A
Power Dissipation
83 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPD65R380C6TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPD65R380C6
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
IPD65R380C6
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPD65R380C6
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000

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IPD65R380C6 Summary of contents

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... Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ...

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