IPD65R380C6 Infineon Technologies, IPD65R380C6 Datasheet - Page 2

• Manufacturer Part Number: IPD65R380C6
• Description: MOSFET N-CH 650V 10.6A TO252-3
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPD65R380C6

• Input Capacitance (ciss) @ Vds: 710pF @ 100V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 3.2A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 10.6A
• Vgs(th) (max) @ Id: 3.5V @ 320µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.34 Ohms
• Drain-source Breakdown Voltage: 700 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 10.6 A
• Power Dissipation: 83 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD65R380C6TR

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