BLF6G22L-40BN,112 NXP Semiconductors, BLF6G22L-40BN,112 Datasheet - Page 7

• Manufacturer Part Number: BLF6G22L-40BN,112
• Description: TRANS LDMOS SOT1112A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22L-40BN,112

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 19dB
• Current Rating: 10A
• Current - Test: *
• Voltage - Test: 28V
• Power - Output: 2.5W
• Package / Case: *
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2.5W(Typ)
• Power Gain (typ)@vds: 19@28VdB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: CDFM
• Pin Count: 7
• Forward Transconductance (typ): 4.3S
• Drain Source Resistance (max): 250(Typ)@6.15Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 16%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BLF6G22L-40BN
Product data sheet
7.6 1-Tone CW
7.7 Test circuit
Table 8.
For test circuit see
[1]
[2]
[3]
Component
C3, C8, C9
C5
C6
C10
C11, C15
C12
C13
R1
R2
R3
Fig 11. Power gain and drain efficiency as function of load power; typical values
American Technical Ceramics type 800B or capacitor of same quality.
TDK or capacitor of same quality.
American Technical Ceramics type 100A or capacitor of same quality.
V
DS
List of components
= 28 V; I
All information provided in this document is subject to legal disclaimers.
Figure
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
SMD resistor
SMD resistor
SMD resistor
Dq
(dB)
G
= 345 mA; f = 2140 MHz.
Rev. 1 — 30 August 2010
p
12.
21
19
17
15
13
11
9
0
10
G
D
p
20
30
BLF6G22L-40BN
001aam467
P
L
33 pF
1.0 pF
100 nF
33 pF
47 pF
Value
10 μF
470 μF; 63 V
10 Ω
820 Ω
1.8 kΩ
(W)
40
Power LDMOS transistor
60
50
40
30
20
10
0
(%)
D
© NXP B.V. 2010. All rights reserved.
[1]
[1]
[2]
[3]
[3]
[2]
Remarks
Philips 0603
Philips 0603
Philips 0603
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