BLF6G13L-250P,112 NXP Semiconductors, BLF6G13L-250P,112 Datasheet - Page 9

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BLF6G13L-250P,112

Manufacturer Part Number
BLF6G13L-250P,112
Description
TRANS LDMOS SOT1121A
Manufacturer
NXP Semiconductors

Specifications of BLF6G13L-250P,112

Voltage - Rated
100V
Transistor Type
LDMOS (Dual)
Frequency
1.3GHz
Gain
15dB
Current Rating
42A
Current - Test
100mA
Voltage - Test
50V
Power - Output
250W
Package / Case
*
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
42A
Drain Source Voltage (max)
100V
Output Power (max)
250W(Min)
Power Gain (typ)@vds
15@50VdB
Package Type
CDFM
Pin Count
5
Drain Source Resistance (max)
340@6Vmohm
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
50%
Mounting
Screw
Mode Of Operation
CW
Number Of Elements
2
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
NXP Semiconductors
Fig 8.
BLF6G13L-250P_6G13LS-250P
Objective data sheet
Earless flanged LDMOST ceramic package; 4 leads
Dimensions
inches
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
mm
Unit
SOT1121B
Outline
version
Package outline SOT1121B
(1)
max
nom
max
nom
min
min
0.187
0.136
4.75
3.45
A
H
A
U
0.155
0.145
3.94
3.68
2
b
0.007
0.003
0.18
0.08
IEC
c
20.02
19.61
0.788
0.772
D
1
3
19.96
19.66
0.786
0.774
D
1
BLF6G13L-250P; BLF6G13LS-250P
JEDEC
8.89
0.35
All information provided in this document is subject to legal disclaimers.
e
0.375
0.365
D
U
H
9.53
9.27
D
e
References
1
1
1
E
Rev. 2 — 21 March 2011
0.375
0.365
0
9.53
9.27
E
1
0.045
0.035
b
1.14
0.89
JEITA
F
2
4
scale
19.94
18.92
0.785
0.745
5
H
5
12.83
12.57
0.505
0.495
w
H
3
1
10 mm
0.067
0.057
D
1.70
1.45
Q
w
2
20.70
20.45
0.815
0.805
F
U
1
D
9.91
9.65
0.39
0.38
U
2
0.51
0.02
w
European
projection
2
E
0.25
0.01
Power LDMOS transistor
w
1
3
Q
© NXP B.V. 2011. All rights reserved.
c
Issue date
09-10-12
09-12-14
sot1121b_po
E
SOT1121B
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