BLF6G13L-250P NXP Semiconductors, BLF6G13L-250P Datasheet
BLF6G13L-250P
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BLF6G13L-250P Summary of contents
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... BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Rev. 3 — 14 October 2011 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Typical RF performance at T Mode of operation CW 1.2 Features and benefits Typical CW performance at a frequency of 1.3 GHz, a supply voltage 100 mA: ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin BLF6G13L-250P (SOT1121A BLF6G13LS-250P (SOT1121B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G13L-250P BLF6G13LS-250P 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol ...
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... D 6.1 Ruggedness in class-AB operation The BLF6G13L-250P and BLF6G13LS-250P are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLF6G13L-250P_6G13LS-250P Product data sheet BLF6G13L-250P; BLF6G13LS-250P Thermal characteristics Parameter thermal resistance from junction to case T DC characteristics C ...
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... NXP Semiconductors 7. Application information 7.1 CW Fig 1. 7.2 2-Carrier CW Fig 2. BLF6G13L-250P_6G13LS-250P Product data sheet BLF6G13L-250P; BLF6G13LS-250P (dB) 16 η 100 100 mA Power gain and drain efficiency as function of load power; typical values (dB) 16 η 100 ...
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... Power gain as a function of load power; typical values 7.3 Impedance information Table 8. Typical values valid per section unless otherwise specified. f MHz 1200 1300 1400 Fig 5. BLF6G13L-250P_6G13LS-250P Product data sheet BLF6G13L-250P; BLF6G13LS-250P 001aan870 150 200 250 P (W) L Fig 4. Typical impedance Z Z optimized for G ...
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... American Technical Ceramics type 800B or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. [3] American Technical Ceramics type 200B or capacitor of same quality. BLF6G13L-250P_6G13LS-250P Product data sheet BLF6G13L-250P; BLF6G13LS-250P List of components Figure 6. Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor ...
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... NXP Semiconductors C17 C16 Fig 6. BLF6G13L-250P_6G13LS-250P Product data sheet BLF6G13L-250P; BLF6G13LS-250P C14 C12 C11 C10 SR1 C13 C15 Printed-Circuit Board (PCB): Duroid 4350B; thickness copper plating = 35 m. See Table 9 for a list of components. Component layout for application circuit All information provided in this document is subject to legal disclaimers. Rev. 3 — ...
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... NXP Semiconductors 8. Test information 8.1 Reliability Years (1) T (2) T (3) T (4) T (5) T Fig 7. BLF6G13L-250P_6G13LS-250P Product data sheet BLF6G13L-250P; BLF6G13LS-250P 5 10 (1) ( MTTF (Years) The reliability at pulsed conditions can be calculated as follows: MTTF . = 130 140 150 ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1121A Fig 8. Package outline SOT1121A BLF6G13L-250P_6G13LS-250P Product data sheet BLF6G13L-250P; BLF6G13LS-250P ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1121B Fig 9. Package outline SOT1121B BLF6G13L-250P_6G13LS-250P Product data sheet BLF6G13L-250P; BLF6G13LS-250P ...
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... Revision history Table 11. Revision history Document ID BLF6G13L-250P_6G13LS-250P v.3 Modifications: BLF6G13L-250P_6G13LS-250P v.2 BLF6G13L-250P_6G13LS-250P v.1 BLF6G13L-250P_6G13LS-250P Product data sheet BLF6G13L-250P; BLF6G13LS-250P Abbreviations Description Continuous Wave Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Mean Time To Failure Radio Frequency Surface Mount Device Voltage Standing-Wave Ratio Release date ...
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... BLF6G13L-250P_6G13LS-250P Product data sheet BLF6G13L-250P; BLF6G13LS-250P [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... For sales office addresses, please send an email to: BLF6G13L-250P_6G13LS-250P Product data sheet BLF6G13L-250P; BLF6G13LS-250P NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved. Date of release: 14 October 2011 Document identifier: BLF6G13L-250P_6G13LS-250P ...