S29AL032D90TFI000 Spansion Inc., S29AL032D90TFI000 Datasheet - Page 37

Flash Memory IC

S29AL032D90TFI000

Manufacturer Part Number
S29AL032D90TFI000
Description
Flash Memory IC
Manufacturer
Spansion Inc.

Specifications of S29AL032D90TFI000

Memory Size
32Mbit
Memory Configuration
4M X 8
Ic Interface Type
CFI, Parallel
Access Time
90ns
Supply Voltage Range
2.7 To 3.6 V
Memory Case Style
TSOP
No. Of Pins
40
Memory Type
Uniform Sector Flash
Interface Type
CFI
Rohs Compliant
Yes
Cell Type
NOR
Density
32Mb
Access Time (max)
90ns
Boot Type
Top
Address Bus
22/21Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
4M/2M
Supply Current
35mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant

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11.8
11.9
January 19, 2007 S29AL032D_00_A9
Sector Erase Command Sequence
Erase Suspend/Erase Resume Commands
Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the
address of the sector to be erased, and the sector erase command.
address and data requirements for the sector erase command sequence.
The device does not require the system to preprogram the memory prior to erase. The Embedded Erase
algorithm automatically programs and verifies the sector for an all zero data pattern prior to electrical erase.
The system is not required to provide any controls or timings during these operations.
After the command sequence is written, a sector erase time-out of 50 µs begins. During the time-out period,
additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may
be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between
these additional cycles must be less than 50 µs, otherwise the last address and command might not be
accepted, and erasure may begin. It is recommended that processor interrupts be disabled during this time to
ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is
written. If the time between additional sector erase commands can be assumed to be less than 50 µs, the
system need not monitor DQ3. Any command other than Sector Erase or Erase Suspend during the
time-out period resets the device to reading array data. The system must rewrite the command sequence
and any additional sector addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out. (See the
Erase Timer
sequence.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands
are ignored. Note that a hardware reset during the sector erase operation immediately terminates the
operation. The Sector Erase command sequence should be reinitiated once the device has returned to
reading array data, to ensure data integrity.
When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses
are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2,
or RY/BY#. (Refer to
Figure 11.2 on page 36
Operations on page 52
The Erase Suspend command allows the system to interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for erasure. This command is valid only during the sector
erase operation, including the 50-µs time-out period during the sector erase command sequence. The Erase
Suspend command is ignored if it is written during the chip erase operation or Embedded Program algorithm.
Writing the Erase Suspend command during the Sector Erase time-out immediately terminates the time-out
period and suspends the erase operation. Addresses are don’t cares when writing the Erase Suspend
command.
When the Erase Suspend command is written during a sector erase operation, the device requires a
maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command is written
during the sector erase time-out, the device immediately terminates the time-out period and suspends the
erase operation.
After the erase operation has been suspended, the system can read array data from or program data to any
sector not selected for erasure. (The device erase suspends all sectors selected for erasure.) Normal read
and write timings and command definitions apply. Reading at any address within erase-suspended sectors
produces status data on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a
sector is actively erasing or is erase-suspended. See
these status bits.
After an erase-suspended program operation is complete, the system can once again read array data within
non-suspended sectors. The system can determine the status of the program operation using the DQ7 or
DQ6 status bits, just as in the standard program operation. See
information.
section.) The time-out begins from the rising edge of the final WE# pulse in the command
Write Operation Status
for parameters, and to
illustrates the algorithm for the erase operation. Refer to
D a t a
S h e e t
S29AL032D
for information on these status bits.)
Figure 17.6 on page 53
Write Operation Status on page 40
Write Operation Status on page 40
Table 11.2 on page 38
for timing diagrams.
Erase/Program
for information on
shows the
DQ3: Sector
for more
35

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