1N6642D2A SEMELAB, 1N6642D2A Datasheet

1N6642D2A

Manufacturer Part Number

1N6642D2A

Description

DIODE,HI-REL,GENERAL,100V,0.3A,DLCC2

Manufacturer

SEMELAB

Datasheet

1.1N6642D2A.pdf (4 pages)

Specifications of 1N6642D2A

Diode Type

Switching

Forward Current If(av)

100mA

Repetitive Reverse Voltage Vrrm Max

75V

Forward Voltage Vf Max

1.2V

Reverse Recovery Time Trr Max

5ns

Forward Surge Current Ifsm Max

2.5A

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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SILICON EPITAXIAL

PLANAR DIODE

1N6642D2A / 1N6642D2B

ABSOLUTE MAXIMUM RATINGS

THERMAL PROPERTIES

(1)

(2)

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Telephone +44 (0) 1455 556565

V BR

V RWM

I O

I FSM

T J

T stg

Symbols

R θJA (PCB)

Low Leakage

Fast Switching

Low Forward Voltage

Hermetic Ceramic Package Designed as a Drop-In Replacement

for “D-5A”/”B-MELF” Package.

Suitable for general purpose, switching applications.

Space Level and High-Reliability Screening Options Available

I O is rated at 300mA @ T A = 75°C for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where

T J (Max) does not exceed 200°C.

T A = 25°C @ I O =0 and VRWM for ten 8.3mS surges at 1 minute intervals.

(1)

(2)

Breakdown Voltage

Working Peak Reverse Voltage

Average Rectified Output Current, T A = 75°C

Surge Current (half sine wave, t p = 8.3ms)

Junction Temperature Range

Storage Temperature Range

Parameters

Thermal Resistance, Junction To Ambient, On PCB

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Fax +44 (0) 1455 552612

Email:

sales@semelab-tt.com

(T A = 25°C unless otherwise stated)

Website:

http://www.semelab-tt.com

-65 to +200°C

300mA

100V

2.5A

75V

Max.

325

Document Number 8272

Units

°C/W

Page 1 of 4

Issue 2

Related parts for 1N6642D2A

1N6642D2A Summary of contents

Page 1

... SILICON EPITAXIAL PLANAR DIODE 1N6642D2A / 1N6642D2B Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”B-MELF” Package. Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS ...

Page 2

... SILICON EPITAXIAL PLANAR DIODE 1N6642D2A / 1N6642D2B ELECTRICAL CHARACTERISTICS Symbols Parameters V BR Breakdown Voltage ( Forward Voltage I R Reverse Current DYNAMIC CHARACTERISTICS C Capacitance t rr Reverse Recovery Time Notes Notes Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Semelab Limited Semelab Limited ...

Page 3

... SILICON EPITAXIAL PLANAR DIODE 1N6642D2A / 1N6642D2B MECHANICAL DATA DLCC2/ D-5A MELF OVERLAY * The additional contact provides a connection to the lid in the application. Connecting the metal lid to a known electrical potential stops deep dielectric discharge in space applications; see the Space Weather link to be specified at order. ...

Page 4

... SILICON EPITAXIAL PLANAR DIODE 1N6642D2A / 1N6642D2B SCREENING OPTIONS Space Level (JQRS/ESA) and High Reliability options are available in accordance with the Screening Options Handbook available for download from the from the TT electronics Semelab web site. ESA Quality Level Products are based on the testing procedures specified in the generic ESCC 5000 and in the corresponding part detail specifications ...

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