FF450R12IE4 Infineon Technologies, FF450R12IE4 Datasheet - Page 3

• Manufacturer Part Number: FF450R12IE4
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of FF450R12IE4

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 450A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 2.55kW
• No. Of Pins: 10
• Collector Emitter Saturation Voltage Vce(sat): 1.75V
• Rohs Compliant: Yes
• Ic (max): 450.0 A
• Vce(sat) (typ): 1.75 V
• Configuration: dual
• Technology: IGBT4
• Housing: PrimePACK™ 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
NTC-Widerstand / NTC-thermistor
Charakteristische Werte / characteristic values
Angaben gemäß gültiger Application Note.
Specification according to the valid application note.
9
%
%
9
B
+o
%
5M 7
+
j
H
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N :
N
N :
N
N :
N
3
3
4
4
4
7
3
6
3
$
4
$
4
3
:#
6`$
$ :#
3
3
3
$
3 $
5stt
$
$
$
7
7
$
6
4
6
$
6
5stt
4
F h
F
$
4
9
$
$
3
$
$
7
2=> * /T
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"0 *
+n * /
+n * /
+n * /
+n * /
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"0 * P
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"0 * P
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2' * /T
2' *
2' * /T
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5q * 5qr @ wNqrxztQ &2q
5q * 5qr @ wNqrxsttQ &2q
V *
FF450R12IE4
%
%
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"F V *
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/ "
/ "
T F 5stt *
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F "W( *
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&
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* !
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F 2=> * / T
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3
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&[ Q2=>* / T S
&[ Q2=>* / T S
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F / ESSy
F / ESSy
2=> * /T
2=> *
2=> * / T
2=> * /T
2=> *
2=> * / T
2=> * /T
2=> *
2=> * / T
2=> * /T
2=> *
2=> * / T
/T
/T
/T
/T
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Nqrxrt
Nqrxzt
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u5&5
5KYi'
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5qr
9qr
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Vorläufige Daten
preliminary data
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!!U/
!
! !!
!!F
!PF
/F
! /
!!/
F
F /
F
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/
F
F
F
F
F
F
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F
/ E&7:
@
@
E&7:
7 o
7 o
[
[
[
7]
v
"
"
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E
E
E
:
d
d
d