FF450R12IE4 Infineon Technologies, FF450R12IE4 Datasheet - Page 7

• Manufacturer Part Number: FF450R12IE4
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of FF450R12IE4

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 450A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 2.55kW
• No. Of Pins: 10
• Collector Emitter Saturation Voltage Vce(sat): 1.75V
• Rohs Compliant: Yes
• Ic (max): 450.0 A
• Vce(sat) (typ): 1.75 V
• Configuration: dual
• Technology: IGBT4
• Housing: PrimePACK™ 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
;_^p * Q+nS
;_^p * Q+nS
5W-, *
5W-, *
2
2
‚KYi' * Q S
‚KYi' * Q S
;_^p * Q+nS
;_^p * Q+nS
5W-, *
5W-, *
2
2
‚KYi' * Q S
‚KYi' * Q S
4
4
4
4
3
3
3
3
1000
100
0,1
3 $
3 $
3 $
3 $
50
40
30
20
10
10
0
1
0,001
0
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/ ]F "'( * P
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:#
100 200 300 400 500 600 700 800 900
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‚KYi' %
0,01
4
4
4
4
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3
3
/T
3
3
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%
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0,1
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Q
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Q
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Q
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Q
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F
F
:
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:
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S
S
S
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3S
3S
3S
3S
FF450R12IE4
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3
3
F
3
3
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1
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P F
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F
FP
10
7
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;_^p * Q5WS
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H2
H2
H2
H2
H2
H2
H2
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5 * Q2S
5 * Q2S
5 * Q2S
4
4
100000
4
4
10000
3
3
3
3
1000
100
3 $
3 $
3 $
3 $
50
40
30
20
10
2
2
2
2
0
0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 10,0
0
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F "'( * P
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20
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7
7
7
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40
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60
3
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3
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Q
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80
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Vorläufige Daten
preliminary data
3S
3S
3S
3S
100 120 140 160
S
S
S
S
3S
3S
3S
3S
S
S
S
S