BUK6507-55C NXP Semiconductors, BUK6507-55C Datasheet - Page 8

• Manufacturer Part Number: BUK6507-55C
• Description: MOSFET,N CH,55V,72A,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BUK6507-55C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 5.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
BUK6507-55C
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
(A)
I
R
(mΩ)
D
10
10
10
10
10
10
DSon
30
20
10
-1
-2
-3
-4
-5
-6
0
gate-source voltage
of drain current; typical values
Sub-threshold drain current as a function of
0
0
V
GS
(V) = 3.6
20
1
min
3.8
40
2
typ
max
4.0
60
3
All information provided in this document is subject to legal disclaimers.
003aae932
003aad806
V
I
GS
D
(A)
10.0
(V)
4.5
5.0
Rev. 01 — 12 October 2010
80
4
N-channel TrenchMOS logic and standard level FET
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.5
1.5
0.5
4
3
2
1
0
2
1
0
-60
-60
junction temperature
factor as a function of junction temperature
0
0
max
min
typ
BUK6507-55C
60
60
120
120
© NXP B.V. 2010. All rights reserved.
003aad805
003aad803
T
T
j
j
(°C)
(°C)
180
180
8 of 14