BUK6507-75C NXP Semiconductors, BUK6507-75C Datasheet - Page 7

• Manufacturer Part Number: BUK6507-75C
• Description: MOSFET,N CH,75V,72A,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BUK6507-75C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 6.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
BUK6507-75C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
g
(S)
(A)
I
fs
D
150
120
160
120
90
60
30
80
40
0
0
drain current; typical values
function of gate-source voltage; typical values
T
Forward transconductance as a function of
V
Transfer characteristics: drain current as a
0
0
j
DS
Characteristics
= 25°C; V
= 25 V
Parameter
source-drain voltage
reverse recovery time
recovered charge
1
20
DS
T
= 25 V
j
= 25 °C
2
…continued
40
3
60
T
j
= 175 °C
All information provided in this document is subject to legal disclaimers.
4
003aae548
003aae546
V
I
D
GS
(A)
(V)
Conditions
I
see
I
V
80
Rev. 02 — 4 October 2010
S
S
5
GS
= 25 A; V
= 20 A; dI
Figure 16
= 0 V; V
GS
S
DS
/dt = -100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 25 V
R
(mΩ)
(A)
DSon
I
D
160
120
80
40
20
16
12
8
4
0
0
j
function of drain-source voltage; typical values
of gate-source voltage; typical values
T
Output characteristics: drain current as a
T
Drain-source on-state resistance as a function
0
0
= 25 °C;
j
j
= 25°C; t
= 25°C; I
V
GS
2
(V) = 10
p
D
= 300 μs
25 A
1
4
BUK6507-75C
Min
-
-
-
5
N-channel TrenchMOS FET
4.5
6
2
Typ
0.8
54
129
© NXP B.V. 2010. All rights reserved.
V
8
DS
003aae547
003aae549
V
GS
(V)
Max
1.2
-
-
4.0
3.4
3.8
3.6
3.2
(V)
10
3
Unit
V
ns
nC
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